PART |
Description |
Maker |
M29W040 M29W040-100K1R M29W040-100K1TR M29W040-100 |
4 Mbit 512Kb x8 / Uniform Block Low Voltage Single Supply Flash Memory 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
M50LPW041N1T |
4 Mbit 512Kb x8, Uniform Block 3V Supply Low Pin Count Flash Memory 4兆位512KB的8,统一V电源低引脚数快闪记忆
|
STMicroelectronics N.V.
|
27C4001 M27C4001 M27C4001-10B1 M27C4001-10B1TR M27 |
From old datasheet system 4 Mbit (512Kb x 8) UV EPROM and OTP EPROM 4 Mbit 512Kb x 8 UV EPROM and OTP EPROM
|
ST Microelectronics STMicroelectronics
|
M29W128GH70N3E M29W128GL |
128-Mbit (16 Mbit x8 or 8 Mbit x16, page, uniform block) 3 V supply flash memory 128-Mbit (16 Mbit x8 or 8 Mbit x16, page, uniform block) 3 V supply flash memory
|
Numonyx B.V
|
M29W400DT M29W400DT45M1E M29W400DT45M1F M29W400DT4 |
4 Mbit (512Kb x8 or 256Kb x16 Boot Block) 3V Supply Flash Memory 4 Mbit (512Kb x8 or 256Kb x16 / Boot Block) 3V Supply Flash Memory 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory 4兆位12KB的x856Kb的x16插槽,引导块V电源快闪记忆
|
STMICROELECTRONICS[STMicroelectronics] ST Microelectronics 意法半导 STMicroelectronics N.V.
|
SST49LF004C-33-4C-NHE SST49LF004C-33-4C-WHE SST49L |
4 Mbit Uniform Sector, Serial Flash Memory 512K X 8 FLASH 3V PROM, 11 ns, PDSO32 4 Mbit Uniform Sector, Serial Flash Memory 1M X 8 FLASH 3V PROM, 11 ns, PQCC32 4 Mbit Uniform Sector, Serial Flash Memory 512K X 8 FLASH 3V PROM, 11 ns, PQCC32 4 Mbit / 8 Mbit LPC Serial Flash
|
SILICON STORAGE TECHNOLOGY INC Silicon Storage Technology, Inc. Silicon Storage Technol...
|
M27W401 M27W401-100B6TR M27W401-100F6TR M27W401-10 |
4 Mbit (512Kb x 8) Low Voltage UV EPROM and OTP EPROM Quadruple 1-of-2 Data Selectors/Multiplexers 16-SOIC 0 to 70 4兆位512KB的8低压紫外线可擦写可编程只读存储器和OTP存储 4 Mbit 512Kb x 8 Low Voltage UV EPROM and OTP EPROM 4兆位512KB的8低压紫外线可擦写可编程只读存储器和OTP存储 Quadruple 1-of-2 Data Selectors/Multiplexers 16-PDIP 0 to 70 4兆位512KB的8低压紫外线可擦写可编程只读存储器和OTP存储 Quadruple 1-of-2 Data Selectors/Multiplexers 16-SO 0 to 70 4兆位512KB的8低压紫外线可擦写可编程只读存储器和OTP存储 4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM
|
SGS Thomson Microelectronics STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
M48T512V M48T512V-70PM1 M48T512V-85PM1 M48T512VPM |
3.3V-5V 4 Mbit 512Kb x8 TIMEKEEPER SRAM
|
STMicroelectronics ST Microelectronics 意法半导
|
M48Z512A-85PM1 M48Z512AY-85PM1 M48Z512A-70PM1 |
4 MBIT (512KB X 8) ZEROPOWER SRAM
|
SGS Thomson Microelectronics
|
M48Z512AY-85PM9 |
4 MBIT (512KB X 8) ZEROPOWER SRAM
|
ST Microelectronics
|
M29F080D M29F080D55N6T -M29F080D70M1T |
8 Mbit (1Mb x8 / Uniform Block) 5V Supply Flash Memory 8 Mbit (1Mb x8, Uniform Block) 5V Supply Flash Memory 8兆(1兆8,统一座)5V电源快闪记忆
|
ST Microelectronics
|